| PART |
Description |
Maker |
| XTSC0402-470PF |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
| HTSC0402-10NF-11V |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
| AT549RBT |
Extreme Temperature Coil
|
Coilcraft lnc.
|
| KTY84-152 KTY84-151 KTY84-150 KTY84-130 KTY84-1 KT |
Silicon temperature sensors SPECIALTY ANALOG CIRCUIT
Silicon temperature sensors(硅元素温度传感器)
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| CD6274CA CD6275 CD6302CA 1.5KCD6.8C CD6272CA CD628 |
Low Capacitance, 16 - Channel ±15 V/12 V iCMOS™ Multiplexer; Package: LFCSP (5x5x.85mm) w/2.7exposed pad; No of Pins: 32; Temperature Range: TBD 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
Low Capacitance, 16 - Channel ±15 V/12 V iCMOS™ Multiplexer; Package: TSSOP (4.4mm); No of Pins: 28; Temperature Range: TBD 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
0.5 Ω CMOS 1.65 V TO 3.6 V 4-Channel Multiplexer; Package: MSOP; No of Pins: 10; Temperature Range: Automotive 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
CELLULAR DIE PACKAGE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
480 MHz, Single Supply, Triple 2:1, Buffered (G= 2) Multiplexer; Package: EVALUATION BOARDS; No of Pins: -; Temperature Range: Industrial 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
16-Channel Multiplexer (Superior DG506A Replacement); Package: PLCC; No of Pins: 28; Temperature Range: Commercial 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
5 Ω Max Ron, 4 - /8 - Channel ±15 V /12 V /± 5 V Multiplexers; Package: LFCSP (4x4mm, 2.50mm exposed pad); No of Pins: 16; Temperature Range: Industrial 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
CMOS Low Voltage, 3 O 4-Channel Multiplexer; Package: TSSOP; No of Pins: 16; Temperature Range: Industrial 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
0.28 O CMOS 1.65 V to 3.6 V Single SPST Switches in SC70 Open for a Logic 1 Input; Package: SC70; No of Pins: 6; Temperature Range: Industrial 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
Low Capacitance, 8-Channel, ±15 V/ 12 V iCMOS® Multiplexer; Package: TSSOP; No of Pins: 16; Temperature Range: Commercial 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Low Capacitance, 8-Channel, ±15 V/ 12 V iCMOS® Multiplexer; Package: LFCSP (4x4x.85mm, 2.10mm exposed pad); No of Pins: 16; Temperature Range: TBD 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
Low Capacitance, 4-Channel, ±15 V/ 12 V iCMOS™ Multiplexer; Package: TSSOP; No of Pins: 16; Temperature Range: TBD 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
4 Channel Buffered, 250 MHz, 10 ns Switching Multiplexer w/Amplifier; Package: SOIC; No of Pins: 14; Temperature Range: Industrial
|
Microsemi, Corp.
MICROSEMI CORP-SCOTTSDALE
|
| BZG05C BZG05C10 BZG05C100 BZG05C11 BZG05C12 BZG05C |
High Precision 10 V Reference; Package: CHIPS OR DIE; No of Pins: 8; Temperature Range: Commercial 硅的Z -二极
High Precision 10 V Reference; Package: PDIP; No of Pins: 8; Temperature Range: Commercial 硅的Z -二极
2.5 V/3.0 V Ultrahigh Precision Bandgap Voltage Reference; Package: PDIP; No of Pins: 8; Temperature Range: Industrial 硅的Z -二极
High Precision 10 V Reference; Package: SOIC; No of Pins: 8; Temperature Range: Commercial 硅的Z -二极
Silicon Z-Diodes 硅的Z -二极
High Precision 10 V Reference; Package: CerDIP; No of Pins: 8; Temperature Range: Military
Silicon Z-Diode(稳压应用电压范围3.3-100V的齐纳二极管)
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
Vishay Telefunken
|
| ASM121Q3 ASM121 |
SIMISTOR TEMPERATURE SENSOR ULTRA-LOW-POWER SILICON THERMISTOR
SIMISTOR⑩ TEMPERATURE SENSOR ULTRA-LOW-POWER SILICON THERMISTOR
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| MPXM2010 MPXM2010D MPXM2010DT1 MPXM2010GS MPXM2010 |
10 KPA ON CHIP TEMPERATURE COMPENSATED CALIBRATED SILICON PRESSURE SENSORS
From old datasheet system
10 kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors
|
Motorola, Inc
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| KTY83/122 KTY83/150 KTY83/151 |
Silicon temperature sensors
|
Philips
|
|
